New Delhi: AGNIT Semiconductors Private Limited, India’s only vertically integrated Gallium Nitride (GaN) semiconductor startup, has been awarded the prestigious Deep Tech Emerge 50 Award 2025 by NASSCOM.
The award was presented during NASSCOM Future Forge 2025, held in Bengaluru on August 7, 2025. Hareesh Chandrasekar, Co-founder & CEO of AGNIT, received the honour from Dr. Tapan Sahoo, Executive Officer, Digital Enterprise, Information & Cybersecurity, Maruti Suzuki Limited. The recognition marks a significant milestone in AGNIT’s mission to build a fully vertically integrated GaN semiconductor ecosystem, making it one of the few companies globally to manage the entire value chain in-house.
Incubated by the Foundation for Science Innovation and Development (FSID) at the Indian Institute of Science (IISc). AGNIT has been recognized for its pioneering work in indigenous GaN technology and has received several accolades, including the ELEVATE startup grant from the Government of Karnataka in 2021 and the Semiconductor Startup Award 2025 from the India Electronics and Semiconductor Association (IESA).
Speaking on the achievement, Hareesh Chandrasekar, CEO and Co-founder of AGNIT Semiconductor, said, “Winning the Deep Tech Emerge 50 Award 2025 from NASSCOM is a powerful affirmation of AGNIT’s mission to place India at the forefront of global GaN semiconductor innovation.
As India’s semiconductor landscape hits a defining moment, the urgency to develop indigenous IP and future-proof capabilities has never been greater. GaN technology is not just an enabler; it’s a catalyst for transformation in high-performance electronics.
At AGNIT, we are building the core of that shift. With our RF GaN devices now entering customer-level system testing and strong support from IISc (Indian Institute of Science) and MeitY (Ministry of Electronics and Information Technology), we are doubling down on our vision to embed India deeper into the global semiconductor value chain.”
